Kinetic model for a step edge in epitaxial growth

被引:64
作者
Caflisch, RE [1 ]
Weinan, E
Gyure, MF
Merriman, B
Ratsch, C
机构
[1] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA
[2] NYU, Courant Inst Math Sci, New York, NY 10012 USA
[3] LLC, HRL Labs, Malibu, CA 90265 USA
来源
PHYSICAL REVIEW E | 1999年 / 59卷 / 06期
关键词
D O I
10.1103/PhysRevE.59.6879
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A kinetic theory is formulated for the velocity of a step edge in epitaxial growth. The formulation involves kinetic, mean-field equations for the density of kinks and "edge adatoms" along the step edge. Equilibrium and kinetic steady states, corresponding to zero and nonzero deposition flux, respectively, are derived for a periodic sequence of step edges. The theoretical results are compared to results from kinetic Monte Carlo (KMC) simulations of a simple solid-on-solid model, and excellent agreement is obtained. This theory provides a starting point for modeling the growth of two-dimensional islands in molecular-beam epitaxy through motion of their boundaries, as an alternative to KMC simulations.
引用
收藏
页码:6879 / 6887
页数:9
相关论文
共 15 条
[1]   MICROSCOPIC VIEW OF NUCLEATION ON SURFACES [J].
BRUNE, H ;
RODER, H ;
BORAGNO, C ;
KERN, K .
PHYSICAL REVIEW LETTERS, 1994, 73 (14) :1955-1958
[2]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[3]   Island dynamics and the level set method for epitaxial growth [J].
Caflisch, RE ;
Gyure, MF ;
Merriman, B ;
Osher, SJ ;
Ratsch, C ;
Vvedensky, DD ;
Zinck, JJ .
APPLIED MATHEMATICS LETTERS, 1999, 12 (04) :13-22
[4]   GROWTH-KINETICS AND STEP DENSITY IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY [J].
CLARKE, S ;
VVEDENSKY, DD .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2272-2283
[5]   THE STABILITY OF GROWING OR EVAPORATING CRYSTALS [J].
GHEZ, R ;
COHEN, HG ;
KELLER, JB .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3685-3693
[6]   THE KINETICS OF FAST STEPS ON CRYSTAL-SURFACES AND ITS APPLICATION TO THE MOLECULAR-BEAM EPITAXY OF SILICON [J].
GHEZ, R ;
IYER, SS .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (06) :804-818
[7]   Level-set methods for the simulation of epitaxial phenomena [J].
Gyure, MF ;
Ratsch, C ;
Merriman, B ;
Caflisch, RE ;
Osher, S ;
Zinck, JJ ;
Vvedensky, DD .
PHYSICAL REVIEW E, 1998, 58 (06) :R6927-R6930
[8]   THE STABILITY OF RAPIDLY GROWING OR EVAPORATING CRYSTALS [J].
KELLER, JB ;
COHEN, HG ;
MERCHANT, GJ .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3694-3697
[9]   STABILITY AND KINETICS OF STEP MOTION ON CRYSTAL-SURFACES [J].
LIU, F ;
METIU, H .
PHYSICAL REVIEW E, 1994, 49 (04) :2601-2616
[10]   ACTIVATION-ENERGY FOR SURFACE-DIFFUSION OF SI ON SI(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY [J].
MO, YW ;
KLEINER, J ;
WEBB, MB ;
LAGALLY, MG .
PHYSICAL REVIEW LETTERS, 1991, 66 (15) :1998-2001