High-mobility electronic transport in ZnO thin films

被引：79

作者：

Tsukazaki, A ^{[1
]}

Ohtomo, A

Kawasaki, M

机构：

[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

[2] Combinatorial Mat Explorat & Technol, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2193727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15Zn0.85O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum growth conditions where gross concentration of intrinsic defects is thought to be reduced. For the best qualified film, Hall mobilities of 5000 cm(2) V-1 s(-1) at 100 K and 440 cm(2) V-1 s(-1) at 300 K were recorded with the residual electron densities of 4x10(14) and 9x10(15) cm(-3), respectively. (c) 2006 American Institute of Physics.

引用

页数：3

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