High-rate GaAs epitaxial lift-off technique for optoelectronic integrated circuits

被引：32

作者：

Maeda, J ^{[1
]}

Sasaki, Y ^{[1
]}

Dietz, N ^{[1
]}

Shibahara, K ^{[1
]}

Yokoyama, S ^{[1
]}

Miyazaki, S ^{[1
]}

Hirose, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,FAC ENGN,HIGASHIHIROSHIMA 739,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

epitaxial lift-off (ELO); surfactant; antifoaming agent; stirring; light interference effect; stress;

D O I：

10.1143/JJAP.36.1554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the epitaxial Lift-off (ELO) technique, where a GaAs device structure is Lifted off from a GaAs substrate using selective wet etching of an AlAs release layer, the etching rate of the AlAs layer is increased by a factor of similar to 8 by raising the etchant temperature to 40 degrees C and adding a surfactant and an antifoaming agent to the etching solution. The mechanism of the high-rate lift-off process is discussed based on the solubility and the diffusion coefficient of the etching product (H-2) in the etching solution. Photoluminescence measurement results show that the quality of the GaAs him is not degraded by the high-rate lift-off process. A high-rate lift-off technique for large-diameter wafers is proposed.

引用

页码：1554 / 1557

页数：4

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