1430 cm(-1) Raman line in ion implanted carbon rich amorphous silicon carbide

Ion implanted amorphous hydrogenated and unhydrogenated silicon carbide thin films (0.1 mu m thick) were investigated through the use of high resolution Raman spectroscopy as function of hydrogen and carbon concentrations in the high carbon concentration region (> 50 at.%). Raman spectra were used to investigate the vibrational properties of the alloys with particular attention to the carbon subsystem. It was found how the position and the bandwidth of the C-C Raman feature is strongly dependent on the carbon and hydrogen concentrations and can give a clear picture of the atomic structure. The results are discussed in terms of chemical ordering and tetrahedral co-ordination and are compared with the existing data on stoichiometric amorphous silicon carbide.