Far-infrared reflection spectra of PbSrSe thin films grown by molecular beam epitaxy

被引：14

作者：

Yu, G

Jiang, LF

Shen, WZ

Wu, HZ

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

[2] Univ Oklahoma, Sch Elect & Comp Engn, Lab Elect Properties Mat, Norman, OK 73019 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 02期

关键词：

D O I：

10.1088/0022-3727/35/2/308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the far-infrared (FIR) reflection measurements of Pb1-xSrxSe thin films with different Sr concentrations grown by molecular beam epitaxy on BaF2 substrates. Sr composition and lattice parameter have been assessed by x-ray diffraction. By fitting the FIR reflection spectra and by comparison with the results of binary PbSe and SrSe thin films. both PbSe-like and SrSe-like optical phonon reflection bands in ternary PbSrSe thin films have been identified. Also, the carrier concentration and mobility of PbSrSe thin films have been extracted from the theoretical calculation of the reflection spectra, and are found to be in agreement with reported results from Hall measurements.

引用

页码：157 / 161

页数：5

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