Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment

被引：67

作者：

Nguyen, N. V. ^{[1
]}

Kirillov, Oleg A. ^{[1
]}

Jiang, W. ^{[1
]}

Wang, Wenyong ^{[1
]}

Suehle, John S. ^{[1
]}

Ye, P. D. ^{[2
,3
]}

Xuan, Y. ^{[4
]}

Goel, N. ^{[4
]}

Choi, K. -W. ^{[4
]}

Tsai, Wilman ^{[4
]}

Sayan, S. ^{[4
]}

机构：

[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA

[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[4] Intel Corp, Santa Clara, CA 95052 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2976676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The metal gate/high-k dielectric/III-V semiconductor band alignment is one of the most technologically important parameters. We report the band offsets of the Al/Al(2)O(3)/GaAs structure and the effect of GaAs surface treatment. The energy barrier at the Al(2)O(3) and sulfur-passivated GaAs interface is found to be 3.0 +/- 0.1 eV whereas for the unpassivated or NH(4)OH-treated GaAs is 3.6 eV. At the Al/Al(2)O(3) interface, all samples yield the same barrier height of 2.9 +/- 0.2 eV. With a band gap of 6.4 +/- 0.05 eV for Al(2)O(3), the band alignments at both Al(2)O(3) interfaces are established. (C) 2008 American Institute of Physics.

引用

页数：3

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