Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip

被引:3
作者
Jessop, P. E. [1 ]
Rowe, L. K. [2 ]
McFaul, S. M. [1 ]
Knights, A. P. [1 ]
Tarr, N. G. [2 ]
Tam, A. [2 ]
机构
[1] McMaster Univ, Ctr Emerging Device Technol, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
关键词
Silicon Film; Electrical Isolation; Detector Diode; Free Electron Concentration; Monolithic Integration;
D O I
10.1007/s10854-008-9669-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the development of a silicon integrated circuit that combines conventional electronic circuitry with all-silicon optical waveguides, detectors and modulators. The circuit functions as an optical channel power leveller by amplifying current from a photodetector and feeding that current back to a modulator on the same waveguide. This article describes the use of local oxidation of silicon (LOCOS) for optical waveguide fabrication, the use of deep diffused wells to ensure electrical isolation between the forward biased modulator and detector diodes, and defect-engineering of the photodiodes to give them sufficient responsivity at the operating wavelength of 1.55 mu m.
引用
收藏
页码:456 / 459
页数:4
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