Controlled type-I-type-II transition in GaAs/AlAs/AlxGa1-xAs double-barrier quantum wells

被引：9

作者：

Chastaingt, B

Gurioli, M

Borri, P

Colocci, M

Neu, G

Deparis, C

Massies, J

MartinezPastor, J

机构：

[1] UNIV FLORENCE,DIPARTIMENTO FIS,LAB EUROPEO SPETTROSCOPIE NON LINEARI,I-50125 FLORENCE,ITALY

[2] IST NAZL FIS MAT,I-50125 FLORENCE,ITALY

[3] UNIV VALENCIA,DEPT FIS APLICADA,E-46100 BURJASSOT,SPAIN

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.55.2393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that the insertion of extremely narrow AlAs layers in double-barrier GaAs/AlAs/AlxGa1-xAs quantum wells results in a variety of electronic configurations, thus providing a powerful tool for tailoring the electronic transitions in GaAs heterostructures. In particular, the transition from type-I to type-II recombination is shown to occur in correspondence with variations by a single monolayer in the thickness of the AlAs and/or GaAs layers. Drastic changes in the recombination lifetimes are correspondingly observed; at the same time, the photoluminescence efficiency is found to be almost independent of the type-I-type-Il character of the transition.

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页码：2393 / 2400

页数：8

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