Single-hole detrapping events in pMOSFETs NBTI degradation

被引：16

作者：

Huard, V ^{[1
]}

Parthasarathy, CR ^{[1
]}

Denais, M ^{[1
]}

机构：

[1] Philips Semicond, F-38926 Crolles, France

来源：

2005 IEEE International Integrated Reliability Workshop, Final Report | 2005年

关键词：

D O I：

10.1109/IRWS.2005.1609552

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work shows that the recovery of NBTI degradation in ultrasmall gate area pMOSFETs presents abrupt steps which are related to the detrapping of one hole. These results call be obtained by using a new approach to monitor the recovery, which is extremely more sensitive than previously proposed methodology. This result opens the way to model the NBTI degradation for ultra-small gate area devices which are main components of SRAM cells.

引用

页码：5 / 9

页数：5

共 11 条

[1]

CHAN CT, 2005, P S VLSI TECHN

[2]

DENAIS M, 2004, INT EL DEV M

[3] Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors [J].