Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer

被引：81

作者：

Jung, JH

Jin, JY

Lee, I

Kim, TW

Roh, HG

Kim, YH

机构：

[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.2185615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The memory effects of ZnO nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that ZnO nanocrystals were created inside the PI layer. Capacitance-voltage (C-V) measurements on Al/PI/nanocrystalline ZnO/PI/p-Si structures at 300 K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the ZnO nanocrystals, indicative of trapping, storing, and emission in the electrons in the ZnO nanocrystals. Possible electronic structures corresponding to the writing and erasing operations for the Al/PI/nanocrystalline ZnO/PI/p-Si device are described on the basis of the C-V results. (c) 2006 American Institute of Physics.

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页数：3

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