Self-organised nanostructures, obtained by oxidation of III-VI compounds

被引：24

作者：

Balitskii, OA ^{[1
]}

机构：

[1] Lviv Ivan Franko Natl Univ, Dept Elect, Dragomanov Str 50, UA-79005 Lvov, Ukraine

来源：

MATERIALS LETTERS | 2006年 / 60卷 / 05期

关键词：

III-VI compound; In2O3; Ga2O3; nanostructures; thermal oxidation;

D O I：

10.1016/j.matlet.2005.09.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface topology of thermally oxidised III-VI compounds (indium and gallium selenides and tellurides) is discussed. It was established that self oxide surfaces possess numerous geometrical morphologies of nanostructures (nanowires for InSe own oxide, nanotrees for gallium telluride, self assembled networks for indium telluride and gallium selenide). The temperature influence on self oxide films composition is compared for all of the structures. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：594 / 599

页数：6

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