Electric field tuning of the band gap in graphene multilayers

被引：117

作者：

Avetisyan, A. A. ^{[1
,2
]}

Partoens, B. ^{[1
]}

Peeters, F. M. ^{[1
]}

机构：

[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium

[2] Yerevan State Univ, Yerevan 0025, Armenia

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 03期

关键词：

carbon; energy gap; multilayers; nanostructured materials; tight-binding calculations;

D O I：

10.1103/PhysRevB.79.035421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum. This gap is tunable by the gate voltage and its size depends on the number of layers. We use a tight-binding approach to calculate the band structure and include a self-consistent calculation in order to obtain the density of charge carriers. Results are presented for systems consisting of three and four layers of graphene. The effect of the circular asymmetry of the band structure on the gap is critically examined.

引用

页数：7

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