Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates

被引:119
作者
Chen, Jianyi [1 ]
Guo, Yunlong [1 ]
Wen, Yugeng [1 ]
Huang, Liping [1 ]
Xue, Yunzhou [1 ]
Geng, Dechao [1 ]
Wu, Bin [1 ]
Luo, Birong [1 ]
Yu, Gui [1 ]
Liu, Yunqi [1 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
two-stage growth; metal-catalyst-free growth; polycrystalline graphene; silicon nitride; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; LARGE-AREA; TRANSISTORS; NUCLEATION;
D O I
10.1002/adma.201202973
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm2 V-1 s-1, which is about three times the value of those grown on SiO2/Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:992 / 997
页数:6
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