AlGaN/GaN HEMTs on (111) silicon substrates

被引：64

作者：

Javorka, P ^{[1
]}

Alam, A ^{[1
]}

Wolter, M ^{[1
]}

Fox, A ^{[1
]}

Marso, M ^{[1
]}

Heuken, M ^{[1
]}

Lüth, H ^{[1
]}

Kordos, P ^{[1
]}

机构：

[1] Res Inst Julich, ISG I, Inst Thin Films & Interfaces, D-52425 Julich, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 01期

关键词：

GaN; MODFETs; semiconductor device fabrication; silicon;

D O I：

10.1109/55.974794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and f(max)/f(T) = 0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling similar to16 W/mm static heat dissipation.

引用

页码：4 / 6

页数：3

共 10 条

[1] AlGaN/GaN high electron mobility transistors on Si(111) substrates [J].

Chumbes, EM ;

Schremer, AT ;

Smart, JA ;

Yang, Y ;

MacDonald, NC ;

Hogue, D ;

Komiak, JJ ;

Lichwalla, SJ ;

Leoni, RE ;

Shealy, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :420-426

[2] GaN MESFETs on (111) Si substrate grown by MOCVD [J].

Egawa, T ;

Nakada, N ;

Ishikawa, H ;

Umeno, M .

ELECTRONICS LETTERS, 2000, 36 (21) :1816-1818

[3] Static measurements of GaN MESFETs on (111) Si substrates [J].

Hoël, V ;

Guhel, Y ;

Boudart, B ;

Gaquière, C ;

De Jaeger, JC ;

Lahrèche, H ;

Gibart, P .

ELECTRONICS LETTERS, 2001, 37 (17) :1095-1096

[4] AlGaN/GaN round-HEMTs on (111) silicon substrates [J].

Javorka, P ;

Alam, A ;

Nastase, N ;

Marso, M ;

Hardtdegen, H ;

Heuken, M ;

Lüth, H ;

Kordos, P .

ELECTRONICS LETTERS, 2001, 37 (22) :1364-1366

[5] Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors [J].

Marchand, H ;

Zhao, L ;

Zhang, N ;

Moran, B ;

Coffie, R ;

Mishra, UK ;

Speck, JS ;

DenBaars, SP ;

Freitas, JA .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (12) :7846-7851

[6]

Marso M, 2001, PHYS STATUS SOLIDI A, V188, P199, DOI 10.1002/1521-396X(200111)188:1<199::AID-PSSA199>3.0.CO

[7]

2-U

[8] NOVEL HEMT LAYOUT - THE ROUNDHEMT [J].

MARSO, M ;

SCHIMPF, K ;

FOX, A ;

VANDERHART, A ;

HARDTDEGEN, H ;

HOLLFELDER, M ;

KORDOS, P ;

LUTH, H .

ELECTRONICS LETTERS, 1995, 31 (07) :589-591

[9]

MARSO M, 2001, 4 INT C NITR SEM DEN

[10] High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE [J].

Nguyen, NX ;

Micovic, M ;

Wong, WS ;

Hashimoto, P ;

McCray, LM ;

Janke, P ;

Nguyen, C .

ELECTRONICS LETTERS, 2000, 36 (05) :468-469

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