Sub-40 nm SOIV-groove n-MOSFETs

被引：34

作者：

Appenzeller, J ^{[1
]}

Martel, R

Avouris, P

Knoch, J

Scholvin, J

del Alamo, JA

Rice, P

Solomon, P

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] MIT, Cambridge, MA 02139 USA

[3] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 02期

关键词：

single-gated device; SOI; ultrashort channel; V-groove MOSFET;

D O I：

10.1109/55.981319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present output and transfer characteristics of single-gated, 36 run, 46 nm and 56 mn channel length SOI MOSFETs with a V-groove design. For the shortest devices we find transconductances as high as 900 muS/mum and drive currents of 490 muA/mum at V-gs - V-th = 0.6 V. The V-groove approach combines the advantages of a controlled, extremely abrupt doping profile between the highly doped source/drain and the undoped channel region with an excellent suppression of short-channel effects. In addition, our V-groove design has the potential of synthesizing devices in the 10 am range.

引用

页码：100 / 102

页数：3

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