Simulation of charge pumping current in hot-carrier degraded P-MOSFET's

被引:1
作者
Samudra, GS [1 ]
Yip, A [1 ]
See, LK [1 ]
机构
[1] Natl Univ Singapore, Dept Elect Engn, Signal Proc & VLSI Design Lab, Singapore 119260, Singapore
来源
ICSE'98: 1998 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1998年
关键词
D O I
10.1109/SMELEC.1998.781145
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Charge pumping is a widely used method of evaluating the Si/SiO2 interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. Two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are also substantiated with the measurement results.
引用
收藏
页码:32 / 36
页数:5
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