Fabrication and characterization of short period AIN/GaN quantum cascade laser structures

被引：14

作者：

Inoue, Y

Nagasawa, H

Sone, N

Ishino, K

Ishida, A

Fujiyasu, H

Kim, JJ

Makino, H

Yao, T

Sakakibara, S

Kuwabara, M

机构：

[1] Shizuoka Univ, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Yamaha Corp, Toyooka, Shizuoka 4380192, Japan

[4] Hamamatsu Photon KK, Cent Res Lab, Hamakita 4348601, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 265卷 / 1-2期

关键词：

intersubband transition; superlattice; GaN; quantum cascade layer;

D O I：

10.1016/j.jcrysgro.2004.01.044

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Short period AlN/GaN quantum cascade (QC) laser structures that utilize 1 polarization field for electron injection were fabricated by hot wall epitaxy. A (GaN)(n)/(AlN), short period superlattice with several molecular layers of AlN was designed in order to realize a mid-infrared laser. The QC structures were analyzed by X-ray diffraction (XRD) measurements, atomic force microscopy and cross-sectional transmission electron microscopy observation. The XRD patterns and cross-sectional TEM images showed that a well-controlled quantum cascade structure could be prepared by hot wall epitaxy without inter-diffusion of the layers. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：65 / 70

页数：6

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