Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

被引：59

作者：

De Wolf, Stefaan ^{[1
]}

Ballif, Christophe ^{[1
]}

Kondo, Michio ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microengn IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 11期

关键词：

HYDROGENATED AMORPHOUS-SILICON; SOLAR-CELLS; PARAMAGNETIC RESONANCE; H ALLOYS; DEPOSITION; SEMICONDUCTORS; EVOLUTION; FILMS;

D O I：

10.1103/PhysRevB.85.113302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk.

引用

页数：4

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