Effect of embedded microcrystallites on the light-induced degradation of hydrogenated amorphous silicon

被引:37
作者
Lubianiker, Y [1 ]
Cohen, JD
Jin, HC
Abelson, JR
机构
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[3] Univ Illinois, Coordinated Sci Lab, Urbana, IL 61801 USA
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 07期
关键词
D O I
10.1103/PhysRevB.60.4434
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the degradation kinetics of undoped hydrogenated amorphous silicon (a-Si:H) samples, in which a small fraction of microcrystallites is embedded. We find that the defect density increases with an unusually slow initial pace, which is then followed by the "normal" t(1/3) law and the subsequent saturation. The corresponding photoconductivity shows a remarkable initial stability. We present a model that reproduces the experimental results, and relates the structural and degradation anomalies. The measured defect density is interpreted as a superposition of contributions from a defective layer that wraps the microcrystallites and a high-quality amorphous matrix. [S0163-1829(99)11531-5].
引用
收藏
页码:4434 / 4437
页数:4
相关论文
共 13 条
[1]   DEEP DEFECT STRUCTURE AND CARRIER DYNAMICS IN AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS DETERMINED BY TRANSIENT PHOTOCAPACITANCE METHODS [J].
COHEN, JD ;
UNOLD, T ;
GELATOS, AV ;
FORTMANN, CM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 141 (1-3) :142-154
[2]   The origin of the enhanced optical absorption in hot wire microcrystalline silicon [J].
Diehl, F ;
Schröder, B ;
Oechsner, H .
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 :819-824
[3]   ON LIGHT-INDUCED EFFECT IN AMORPHOUS HYDROGENATED SILICON [J].
GUHA, S ;
NARASIMHAN, KL ;
PIETRUSZKO, SM .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :859-860
[4]   Optical spectra of crystalline silicon particles embedded in an amorphous silicon matrix [J].
Kwon, D ;
Lee, H ;
Cohen, JD ;
Jin, HC ;
Abelson, JR .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :1040-1044
[5]   On the way towards high efficiency thin film silicon solar cells by the ''micromorph'' concept [J].
Meier, J ;
Torres, P ;
Platz, R ;
Dubail, S ;
Kroll, U ;
Selvan, JAA ;
Vaucher, NP ;
Hof, C ;
Fischer, D ;
Keppner, H ;
Shah, A ;
Ufert, KD ;
Giannoules, P ;
Koehler, J .
AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :3-14
[6]   DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].
MICHELSON, CE ;
GELATOS, AV ;
COHEN, JD .
APPLIED PHYSICS LETTERS, 1985, 47 (04) :412-414
[7]   EFFECT OF HYDROGEN CONTENT ON THE LIGHT-INDUCED DEFECT GENERATION IN DIRECT-CURRENT MAGNETRON REACTIVELY SPUTTERED HYDROGENATED AMORPHOUS-SILICON THIN-FILMS [J].
PINARBASI, M ;
KUSHNER, MJ ;
ABELSON, JR .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2255-2264
[8]   Possible origin of large response times and ambipolar diffusion lengths in hot-wire-CVD silicon films [J].
Schwarz, R ;
Múrias, T ;
Conde, JP ;
Brogueira, P ;
Chu, V .
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 :799-804
[9]   REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].
STAEBLER, DL ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294
[10]  
STREET R, 1991, HYDROGENATED AMORPHO, P218