Chemical vapor deposition of silicon from silane: Review of growth mechanisms and modeling/scaleup of fluidized bed reactors

被引:67
作者
Filtvedt, W. O.
Holt, A.
Ramachandran, P. A. [1 ]
Melaaen, M. C. [2 ]
机构
[1] Washington Univ, St Louis, MO 63130 USA
[2] Telemark Univ Coll, Porsgrunn, Norway
关键词
Polysilicon; Fluidized bed; FBR; Silicon; POLYCRYSTALLINE-SILICON; THERMAL-DECOMPOSITION; HOMOGENEOUS NUCLEATION; CRYSTALLINE SILICON; MATHEMATICAL-MODEL; AMORPHOUS-SILICON; NUMERICAL-MODEL; CVD SILICON; SI-H; MONOSILANE;
D O I
10.1016/j.solmat.2012.08.014
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
For an installed silicon based solar cell panel, about 40% of the energy costs involved in the production of the panels can be attributed to the production of the silicon feedstock itself (poly production and crystal growth). Hence reducing the energy consumption in these steps is crucial in order to minimize the energy payback time of installed capacity. For the first step, viz., the poly production, the most promising cost reduction alternative is the fluidized bed reactors (FBR) using silane as a precursor rather than trichlorosilane (TCS) since for TCS the reverse reactions makes the theoretical trichlorosilane conversion substantially lower. Use of silane has, however, many challenges and scaleup to larger capacity can be achieved if associated risks are properly dealt with. This paper outlines some of these challenges and provides a detailed survey of the current status on the growth mechanism and kinetics of silane pyrolysis. The paper also provides a summary of modeling of fluidized bed reactors (FBR) in some depth and give some empirical insight to key aspects in FBR scaleup design. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:188 / 200
页数:13
相关论文
共 104 条
[11]   REACTIVE STICKING COEFFICIENTS FOR SILANE AND DISILANE ON POLYCRYSTALLINE SILICON [J].
BUSS, RJ ;
HO, P ;
BREILAND, WG ;
COLTRIN, ME .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2808-2819
[12]   MECHANISMS OF SILICON MONOCRYSTALLINE GROWTH FROM SIH4/H-2 AT REDUCED PRESSURES [J].
CADORET, R ;
HOTTIER, F .
JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :259-274
[13]   VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM [J].
CARDONA, M .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02) :463-481
[14]   SILICON DEPOSITION FROM SILANE OR DISILANE IN A FLUIDIZED-BED .2. THEORETICAL-ANALYSIS AND MODELING [J].
CAUSSAT, B ;
HEMATI, M ;
COUDERC, JP .
CHEMICAL ENGINEERING SCIENCE, 1995, 50 (22) :3625-3635
[15]   NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J].
CLAASSEN, WAP ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :194-202
[16]   A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J].
COLTRIN, ME ;
KEE, RJ ;
MILLER, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :425-434
[17]   A MATHEMATICAL-MODEL OF THE FLUID-MECHANICS AND GAS-PHASE CHEMISTRY IN A ROTATING-DISK CHEMICAL VAPOR-DEPOSITION REACTOR [J].
COLTRIN, ME ;
KEE, RJ ;
EVANS, GH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (03) :819-829
[18]  
Coltrin Michael E., 1987, ANNU REV PHYS CHEM, V38, P109
[19]   Microstructure and grain growth of polycrystalline silicon grown in fluidized bed reactors [J].
Dahl, M. M. ;
Bellou, A. ;
Bahr, D. F. ;
Norton, M. G. ;
Osborne, E. W. .
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) :1496-1500
[20]   Temperature homogeneity of polysilicon rods in a Siemens reactor [J].
del Coso, G. ;
Tobias, I. ;
Canizo, C. ;
Luque, A. .
JOURNAL OF CRYSTAL GROWTH, 2007, 299 (01) :165-170