Effects of nitrogen argon ratio on composition and structure of InN films prepared by r.f. magnetron sputtering

被引：28

作者：

Guo, QX ^{[1
]}

Shingai, N ^{[1
]}

Mitsuishi, Y ^{[1
]}

Nishio, M ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 840, Japan

来源：

THIN SOLID FILMS | 1999年 / 343卷

关键词：

indium nitride; sputtering; composition; crystal structure; nitrogen argon ratio;

D O I：

10.1016/S0040-6090(98)01671-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The composition and structure of InN films, prepared by reactive r.f. magnetron sputtering method using nitrogen in the range from 0-100% in the nitrogen/argon gas mixture during sputtering, have been investigated. X-ray diffraction and Auger electron spectroscopy results show that the phase of the deposited films change from In, to In + InN and to InN as nitrogen content in the sputtering gas is increased. The InN films with wurtzite structure can be grown in the range of 40-100% nitrogen content in the sputtering gas, however, highly c-axis preferred InN films are obtained only when pure nitrogen is used as the sputtering gas. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：524 / 527

页数：4

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