Self-assembled-monolayer film islands as a self-patterned-mask for SiO2 thickness measurement with atomic force microscopy

A novel method for measuring ultrathin (2-12 nm) SiO2 film thickness is discussed. The process consists of: (1) formation of octadecyltrichlorosilane (OTS) self-assembled-monolayer (SAM) islands on SiO2 of which thickness to be measured, (2) removal of the SiO2 layers not covered by the OTS-SAM islands, and (3) measurement of the height difference between the etched and nonetched areas by atomic-force-microscopy. The OTS film is good resist against HF and its islands can be regarded as self-patterned-mask. Practical usefulness is demonstrated not only by the compatibility of the measured values but also by the short measurement period resulting from the directness of the method. (C) 1997 American Institute of Physics.