ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes

被引：3

作者：

Chang, SJ ^{[1
]}

Su, YK

Chen, WR

Chen, JF

Chen, MH

Juang, FS

Lan, WH

Lin, WJ

Cherng, YT

Liu, CH

Liaw, UH

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Huwei Inst Technol, Dept Electro Opt Engn, Huwei 632, Taiwan

[4] Chung Shan Inst Sci & Technol, Taoyuan 325, Taiwan

[5] Nan Jeon Inst Technol, Dept Elect Engn, Yan Hsui 737, Taiwan

[6] Chin Min Coll, Dept Elect Engn, To Fen 351, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 2A期

关键词：

ZnMgSSe; MSM photodetector; ITO; transparent contact;

D O I：

10.1143/JJAP.41.L115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the first time, indium-tin-oxide (ITO) layers were deposited onto n-ZnMgSSe films by DC magnetron sputtering and ZnMgSSe metal-semiconductor-metal (MSM) photodetectors were fabricated. The Schottky barrier height of ITO on n-ZnMgSSe was determined to be about 0.65 eV. It was also found that we could achieve a photo current-to-dark current contrast higher than four orders of magnitude by applying a 10 V reverse bias. We also found that the maximum photoresponsivity at 400 nm is 0.27 A/W under a 5 V reverse bias. Such a value corresponds to an external quantum efficiency of 41.5%.

引用

页码：L115 / L117

页数：3

共 20 条

[1] Optics and magneto-optics of ZnSe heteroepitaxial layers [J].

Aliev, GN ;

Datsiev, RM ;

Ivanov, SV ;

Kopev, PS ;

Seisyan, RP ;

Sorokin, SV .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :523-527

[2] Ohmic contact to p-ZnSe and p-ZnMgSSe [J].

Chang, SJ ;

Chen, WR ;

Su, YK ;

Tu, RC ;

Lan, WH ;

Chang, H .

ELECTRONICS LETTERS, 1999, 35 (15) :1280-1281

[3] Formation of local p+ region in ZnSe by Cu3Ge contact [J].

Chang, SJ ;

Chen, WR ;

Su, YK ;

Chen, JF ;

Lan, WH ;

Lin, ACH ;

Chang, H .

ELECTRONICS LETTERS, 1999, 35 (25) :2231-2232

[4] Au/AuBe/Cr contact to p-ZnTe [J].

Chang, SJ ;

Chen, WR ;

Su, YK ;

Chen, JF ;

Lan, WH ;

Chiang, CI ;

Lin, WJ ;

Cherng, YT ;

Liu, CH .

ELECTRONICS LETTERS, 2001, 37 (05) :321-322

[5] GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Chi, JY ;

Chang, CA ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :848-850

[6] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[7] Reactive ion etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H2/Ar and CH4/H2/Ar [J].

Chen, WR ;

Chang, SJ ;

Su, YK ;

Lan, WH ;

Lin, ACH ;

Chang, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (6A) :3308-3313

[8] Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSe [J].

Hong, H ;

Anderson, WA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1127-1134

[9] Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors [J].

Huang, ZC ;

Chen, JC ;

Wickenden, D .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :362-366

[10] HIGH-PERFORMANCE BACK-ILLUMINATED INGAAS INALAS MSM PHOTODETECTOR WITH A RECORD RESPONSIVITY OF 0.96 A/W [J].

KIM, JH ;

GRIEM, HT ;

FRIEDMAN, RA ;

CHAN, EY ;

RAY, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (11) :1241-1244

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