On-state breakdown in power HEMT's: Measurements and modeling

被引：40

作者：

Somerville, MH

Blanchard, R

del Alamo, JA

Duh, KG

Chao, PC

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Sanders, Nashua, NH 03061 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期

关键词：

breakdown; HEMT; impact ionization; MODFET;

D O I：

10.1109/16.766868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out a systematic study of on-state breakdown in a sample set of InAlAs/InGaAs HEMT's using a new gate current extraction technique in conjunction with sidegate and temperature-dependent measurements. We find that as the device is turned on, the breakdown voltage limiting mechanism changes from a TFE-dominated process to a multiplication-dominated process. This physical understanding allows the creation of a phenomenological physical model for breakdown which agrees well with all our experimental results, and explains the relationship between BVon, and the sheet carrier concentration. Our results suggest that depending on device design, either on-state or off-state breakdown can limit maximum power.

引用

页码：1087 / 1093

页数：7

共 19 条

[1] A 94-GHZ MONOLITHIC BALANCED POWER-AMPLIFIER USING 0.1-MU-M GATE GAAS-BASED HEMT MMIC PRODUCTION PROCESS TECHNOLOGY [J].

AUST, M ;

WANG, H ;

BIEDENBENDER, M ;

LAI, R ;

STREIT, DC ;

LIU, PH ;

DOW, GS ;

ALLEN, BR .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (01) :12-14

[2] BREAKDOWN VOLTAGE ENHANCEMENT FROM CHANNEL QUANTIZATION IN INALAS/N+-INGAAS HFETS [J].

BAHL, SR ;

DELALAMO, JA .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) :123-125

[3] OFF-STATE BREAKDOWN IN INALAS/INGAAS MODFETS [J].

BAHL, SR ;

DELALAMO, JA ;

DICKMANN, J ;

SCHILDBERG, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (01) :15-22

[4] High-efficiency GaAs-based pHEMT C-band power amplifier [J].

Brown, JJ ;

Pusl, JA ;

Hu, M ;

Schmitz, AE ;

Docter, DP ;

Shealy, JB ;

Case, MG ;

Thompson, MA ;

Nguyen, LD .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1996, 6 (02) :91-93

[5] Ti-gate metal induced PHEMT degradation in hydrogen [J].

Chao, PC ;

Hu, W ;

DeOrio, H ;

Swanson, AW ;

Hoffmann, W ;

Taft, W .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :441-443

[6] A 60-GHZ HIGH-EFFICIENCY MONOLITHIC POWER-AMPLIFIER USING 0.1-MU-M PHEMTS [J].

CHEN, SW ;

SMITH, PM ;

LIU, SMJ ;

KOPP, WF ;

ROGERS, TJ .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1995, 5 (06) :201-203

[7]

DICKMANN J, 1994, P 6 INT C INP REL MA, P335

[8] AN ALGAAS/INGAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR WITH IMPROVED BREAKDOWN VOLTAGE FOR X-BAND AND KU-BAND POWER APPLICATIONS [J].

HUANG, JC ;

JACKSON, GS ;

SHANFIELD, S ;

PLATZKER, A ;

SALEDAS, PK ;

WEICHERT, C .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (05) :752-759

[9]

HUR KY, 1995, P IEEE GAAS IC S, P101

[10] Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMT's [J].

Meneghesso, G ;

Mion, A ;

Neviani, A ;

Matloubian, M ;

Brown, J ;

Hafizi, M ;

Liu, T ;

Canali, C ;

Pavesi, M ;

Manfredi, M ;

Zanoni, E .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :43-46

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