Modelling and simulation of reliability for design

被引:11
作者
Mathewson, A [1 ]
O'Sullivan, P [1 ]
Concannon, A [1 ]
Foley, S [1 ]
Minehane, S [1 ]
Duane, R [1 ]
Palser, K [1 ]
机构
[1] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland
关键词
D O I
10.1016/S0167-9317(99)00432-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper provides a review of the use of simulation tools in the design process. It provides examples of applications where such tools can be effective in improving device functionality: yield, manufacturability and reliability. Topics covered are numerical process and device simulation, electromigration and stress migration simulation as well as circuit simulation and reliability modelling. Specific example of how such simulators work are provided and examples of currently available software tools are reviewed.
引用
收藏
页码:95 / 117
页数:23
相关论文
共 103 条
[1]   DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J].
AGARWALA, BN ;
ATTARDO, MJ ;
INGRAHAM, AP .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3954-&
[2]  
AMERSEKERA A, 1994, ANN P REL PHYS S, P280
[3]   STATISTICAL METALLURGICAL MODEL FOR ELECTROMIGRATION FAILURE IN ALUMINUM THIN-FILM CCNDUCTORS [J].
ATTARDO, MJ ;
RUTLEDGE, R ;
JACK, RC .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4343-&
[4]  
BELLENS R, 1995, P IRPS, P254
[5]  
Berman A., 1981, P INT REL PHYS S IRP, P204
[6]   ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].
BLACK, JR .
PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1587-&
[7]   ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J].
BLACK, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :338-&
[8]   RELAXATION-TIME APPROXIMATION AND MIXING OF HOT AND COLD ELECTRON POPULATIONS [J].
BORDELON, TJ ;
AGOSTINELLI, VM ;
WANG, XL ;
MAZIAR, CM ;
TASCH, AF .
ELECTRONICS LETTERS, 1992, 28 (12) :1173-1175
[9]  
BRIERE O, P ESSDERC 96, P759
[10]   Modeling electromigration and stress migration damage in advanced interconnect structures [J].
Brown, D .
MATERIALS RELIABILITY IN MICROELECTRONICS VIII, 1998, 516 :135-146