Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate

被引：34

作者：

Shao, Dali ^{[1
]}

Yu, Mingpeng ^{[2
,3
]}

Lian, Jie ^{[2
]}

Sawyer, Shayla ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA

[3] Univ Sci & Technol Beijing, Dept Phys, Sch Math & Phys, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 21期

关键词：

ZINC-OXIDE; SI PHOTODIODE; DIODES;

D O I：

10.1063/1.4767679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A heterojunction photodiode was fabricated from ZnO nanowires (NWs) grown on a p-type Si (100) substrate using a hydrothermal method. Post growth hydrogen treatment was used to improve the conductivity of the ZnO NWs. The heterojunction photodiode showed diode characteristics with low reverse saturation current (5.58 x 10(-7) A), relatively fast transient response, and high responsivity (22 A/W at 363 nm). Experiments show that the photoresponsivity of the photodiode is dependent on the polarity of the voltages. The photoresponsivity of the device was discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767679]

引用

页数：4

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