Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

被引：17

作者：

Fukata, N ^{[1
]}

Fukuda, S

Sato, S

Ishioka, K

Kitajima, M

Hishita, T

Murakami, K

机构：

[1] Univ Tsukuba, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

[3] Univ Tsukuba, Special Res Project Nanosci, Tsukuba, Ibaraki 3058573, Japan

[4] Natl Inst Mat Sci, Int Ctr Young Sci, Tsukuba, Ibaraki 3050044, Japan

[5] Natl Inst Mat Sci, Ma Engn Lab, Tsukuba, Ibaraki 3050047, Japan

[6] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.72.245209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of B-10 with B-11 were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

引用

页数：8

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