Stacking-fault formation and propagation in 4H-SiC PiN diodes

被引：58

作者：

Stahlbush, RE ^{[1
]}

Fatemi, M

Fedison, JB

Arthur, SD

Rowland, LB

Wang, S

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] GE Co, Ctr Corp Res & Dev, Niskayuna, NY 12309 USA

[3] Sterling Semicond, Danbury, CT 06810 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 05期

关键词：

stacking fault; dislocations; electroluminescence; PiN diodes; current degradation;

D O I：

10.1007/s11664-002-0085-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stacking-fault growth in SiC PiN diodes has been examined using light-emission imaging and stressing at 80 A/cm(2) and 160 A/cm(2). Dark areas in the emission develop because of stacking faults and the current capability of the diode drops. More detailed images are produced by reducing the current by a factor of 1000. The low-current images are bright lines at dislocations bounding the stacking faults and at or near the stacking-fault intersection with the surface. Stacking faults nucleate 1-2 mum below the surface. Most, but not all, continue growing until they span the diode. Growth dynamics and their dependence on the current density are discussed.

引用

页码：370 / 375

页数：6

共 5 条

[1] Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes [J].