Microsecond spin-flip times in n-GaAs measured by time-resolved polarization of photoluminescence -: art. no. 121307

被引：44

作者：

Colton, JS ^{[1
]}

Kennedy, TA ^{[1
]}

Bracker, AS ^{[1
]}

Gammon, D ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.69.121307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed microsecond spin-flip times in lightly doped n-GaAs, by measuring the photoluminescence polarization in the time domain with pump and probe pulses. Times up to 1.4 mus have been measured. Our results as a function of magnetic field indicate three regions governing the spin relaxation: a low field region, where spin-flip times increase due to suppression of the nuclear hyperfine. interaction for localized electrons, a medium field region where spin-flip times increase due to narrowing of the hyperfine relaxation for interacting electrons, and a high field region where spin-flip times begin to level off due to the increasing importance of spin-orbit relaxation mechanisms.

引用

页数：4

共 28 条

[1] Magnetic-field dependence of electron spin relaxation in n-type semiconductors -: art. no. 233206 [J].