A sub-micron depletion-type photonic modulator in Silicon On Insulator

被引：151

作者：

Gardes, FY ^{[1
]}

Reed, GT ^{[1
]}

Emerson, NG ^{[1
]}

Png, CE ^{[1
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

来源：

OPTICS EXPRESS | 2005年 / 13卷 / 22期

关键词：

D O I：

10.1364/OPEX.13.008845

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We provide detailed analysis of a four terminal p(+) pnn(+) optical modulator integrated into a silicon-on-insulator (SOI) rib waveguide. The proposed depletion device has been designed to approach birefringence free operation. The modulation mechanism is the carrier depletion effect in a pn junction; carrier losses induced are minimised in our design and because we use a depletion device, the device is insensitive to carrier lifetime. The rise time and fall time of the proposed device have both been calculated to be 7 ps for a reverse bias of only 5 volts. A maximum excess loss of 2 dB is predicted for TE and TM due to the presence of p type and n type carriers in the waveguide. (c) 2005 Optical Society of America.

引用

页码：8845 / 8854

页数：10

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