High-speed silicon electrooptic modulator design

被引：48

作者：

Gan, FW ^{[1
]}

Kärtner, FX ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 05期

基金：

美国国家科学基金会;

关键词：

electronic carrier injection; high-index contrast silicon (Si) waveguide; high-speed optical modulator;

D O I：

10.1109/LPT.2005.846756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrically driven Mach-Zehnder waveguide modulator based on high-index contrast silicon split-ridge waveguide technology and electronic carrier injection is proposed. The excellent optical and carrier confinement possible in high-index contrast waveguide devices, together with good thermal heat sinking and forward biased operation, enables high-speed modulation with small signal modulation bandwidths beyond 20 GHz, a V, times length figure of merit of V pi L = 0.5 V center dot cm and an insertion loss of about 4 dB. The modulator can be fabricated in a complementary metal-oxide-semiconductor compatible way.

引用

页码：1007 / 1009

页数：3

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