ZnSe-based mixed-color LEDs

被引：25

作者：

Chen, WR ^{[1
]}

Huang, CJ ^{[1
]}

机构：

[1] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 05期

关键词：

II-VI light-emitting diode (LED); mixed color; molecular beam epitaxy (MBE); ZnSe;

D O I：

10.1109/LPT.2004.826116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

II-VI mixed-color light-emitting diodes (LEDs) were prepared by molecular beam epitaxy. At 20 K, it was found that we could achieve a near white light emission from sample 102B quantum well with a Commission Internationale de Enluminure index of x = 0.4 and y = 0.45. By carefully designing the device structure, we should be able to achieve a phosphor free white light LED by using the combinations of ZnCdSe and ZnCdSeTe wells.

引用

页码：1259 / 1261

页数：3

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