Chemical and structural properties of conducting nanofilaments in TiN/HfO2-based resistive switching structures

被引：69

作者：

Calka, P. ^{[1
]}

Martinez, E. ^{[1
]}

Delaye, V. ^{[1
]}

Lafond, D. ^{[1
]}

Audoit, G. ^{[1
]}

Mariolle, D. ^{[1
]}

Chevalier, N. ^{[1
]}

Grampeix, H. ^{[1
]}

Cagli, C. ^{[1
]}

Jousseaume, V. ^{[1
]}

Guedj, C. ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 08期

关键词：

YTTRIA-STABILIZED ZIRCONIA; ENERGY-LOSS SPECTROSCOPY; ELECTRONIC-STRUCTURE; DIELECTRICS; MEMORIES;

D O I：

10.1088/0957-4484/24/8/085706

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Structural, chemical and electronic properties of electroforming in the TiN/HfO2 system are investigated at the nanometre scale. Reversible resistive switching is achieved by biasing the metal oxide using conductive atomic force microscopy. An original method is implemented to localize and investigate the conductive region by combining focused ion beam, scanning spreading resistance microscopy and scanning transmission electron microscopy. Results clearly show the presence of a conductive filament extending over 20 nm. Its size and shape is mainly tuned by the corresponding HfO2 crystalline grain. Oxygen vacancies together with localized states in the HfO2 band gap are highlighted by electron energy loss spectroscopy. Oxygen depletion is seen mainly in the central part of the conductive filament along grain boundaries. This is associated with partial amorphization, in particular at both electrode/oxide interfaces. Our results are a direct confirmation of the filamentary conduction mechanism, showing that oxygen content modulation at the nanometre scale plays a major role in resistive switching.

引用

页数：9

共 44 条

[1] Toward a better understanding of the nanoscale degradation mechanisms of ultra-thin Si02/Si films: Investigation of the best experimental conditions with a conductive-atomic force microscope [J].

Arinero, R. ;

Hourani, W. ;

Touboul, A. D. ;

Gautier, B. ;

Ramonda, M. ;

Albertini, D. ;

Militaru, L. ;

Gonzalez-Velo, Y. ;

Guasch, C. ;

Saigne, F. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)

[2] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[3] Interface structure and non-stoichiometry in HfO2 dielectrics [J].

Baik, HS ;

Kim, M ;

Park, GS ;

Song, SA ;

Varela, M ;

Franceschetti, A ;

Pantelides, ST ;

Pennycook, SJ .

APPLIED PHYSICS LETTERS, 2004, 85 (04) :672-674

[4] Metal oxide resistive memory switching mechanism based on conductive filament properties [J].

Bersuker, G. ;

Gilmer, D. C. ;

Veksler, D. ;

Kirsch, P. ;

Vandelli, L. ;

Padovani, A. ;

Larcher, L. ;

McKenna, K. ;

Shluger, A. ;

Iglesias, V. ;

Porti, M. ;

Nafria, M. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)

[5] Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM [J].

Cagli, C. ;

Buckley, J. ;

Jousseaume, V. ;

Cabout, T. ;

Salaun, A. ;

Grampeix, H. ;

Nodin, J. F. ;

Feldis, H. ;

Persico, A. ;

Cluzel, J. ;

Lorenzi, P. ;

Massari, L. ;

Rao, R. ;

Irrera, F. ;

Aussenac, F. ;

Carabasse, C. ;

Coue, M. ;

Calka, P. ;

Martinez, E. ;

Perniola, L. ;

Blaise, P. ;

Fang, Z. ;

Yu, Y. H. ;

Ghibaudo, G. ;

Deleruyelle, D. ;

Bocquet, M. ;

Mueller, C. ;

Padovani, A. ;

Pirrotta, O. ;

Vandelli, L. ;

Larcher, L. ;

Reimbold, G. ;

de Salvo, B. .

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,

[6] Resistance switching in HfO2-based OxRRAM devices [J].

Calka, P. ;

Martinez, E. ;

Lafond, D. ;

Dansas, H. ;

Tirano, S. ;

Jousseaume, V. ;

Bertin, F. ;

Guedj, C. .

MICROELECTRONIC ENGINEERING, 2011, 88 (07) :1140-1142

[7] An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance [J].

Chen, Yu-Sheng ;

Lee, Heng-Yuan ;

Chen, Pang-Shiu ;

Wu, Tai-Yuan ;

Wang, Ching-Chiun ;

Tzeng, Pei-Jer ;

Chen, Frederick ;

Tsai, Ming-Jinn ;

Lien, Chenhsin .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1473-1475

[8] Unipolar Switching Behaviors of RTO WOX RRAM [J].

Chien, W. C. ;

Chen, Y. C. ;

Lai, E. K. ;

Yao, Y. D. ;

Lin, P. ;

Horng, S. F. ;

Gong, J. ;

Chou, T. H. ;

Lin, H. M. ;

Chang, M. N. ;

Shih, Y. H. ;

Hsieh, K. Y. ;

Liu, R. ;

Lu, Chih-Yuan .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (02) :126-128

[9] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[10] Electron energy-loss spectroscopy in the TEM [J].

Egerton, R. F. .

REPORTS ON PROGRESS IN PHYSICS, 2009, 72 (01)

← 1 2 3 4 5 →