Unipolar Switching Behaviors of RTO WOX RRAM

被引：94

作者：

Chien, W. C. ^{[1
,2
]}

Chen, Y. C. ^{[1
]}

Lai, E. K. ^{[1
,3
]}

Yao, Y. D. ^{[4
,5
]}

Lin, P. ^{[2
]}

Horng, S. F. ^{[3
]}

Gong, J. ^{[3
]}

Chou, T. H. ^{[6
]}

Lin, H. M. ^{[6
]}

Chang, M. N. ^{[6
]}

Shih, Y. H. ^{[1
]}

Hsieh, K. Y. ^{[1
]}

Liu, R. ^{[1
]}

Lu, Chih-Yuan ^{[1
]}

机构：

[1] Macronix Int Co Ltd, Macronix Emerging Cent Lab, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[4] Fu Jen Catholic Univ, Dept Phys, Taipei 24205, Taiwan

[5] Fu Jen Catholic Univ, Grad Inst Appl Sci & Engn, Taipei 24205, Taiwan

[6] Natl Chiao Tung Univ, Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 02期

关键词：

Embedded memory; resistive random access memory (RRAM); tungsten oxide; unipolar operation;

D O I：

10.1109/LED.2009.2037593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microstructure and electrical properties of the WOX-based resistive random access memory are investigated in this letter. The WOX layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOX layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.

引用

页码：126 / 128

页数：3

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