Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

被引：73

作者：

Lee, C. B. ^{[1
]}

Kang, B. S.

Lee, M. J.

Ahn, S. E.

Stefanovich, G.

Xianyu, W. X.

Kim, K. H.

Hur, J. H.

Yin, H. X.

Park, Y.

Yoo, I. K.

Park, J.-B.

Park, B. H.

机构：

[1] Samsung Adv Inst Technol, Semiconduct Dev Lab, Gyeonggi Do 446712, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Gyeonggi Do 446712, South Korea

[3] Konkuk Univ, Dept Phys, Seoul 143701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.2769759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of Ni and Ni0.83Pt0.17 alloy electrodes on the resistance switching of the dc-sputtered polycrystalline NiO thin films were investigated. The initial off-state resistances of the films were similar to that of Pt/NiO/Pt film. However, after the first cycle of switching, the off-state resistance significantly decreased in the films with Ni in the electrode. It can be attributed to the migration of Ni from electrodes to the NiO films. The improvement in data dispersion of switching parameters is explained in terms of the decrease of the effective thickness of the films resulting from the migration of Ni.

引用

页数：3

共 13 条

[1]

Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[2]

Cu segregation at the Al(Cu)Al2O3 interface [J].

Copel, M ;

Rodbell, KP ;

Tromp, RM .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1625-1627

[3]

Improvement of resistive memory switching in NiO using IrO2 [J].

Kim, D. C. ;

Lee, M. J. ;

Ahn, S. E. ;

Seo, S. ;

Park, J. C. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[4]

Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[5]

Novel Ir-Ti alloy electrodes for high-density ferroelectric memory applications [J].

Koo, JM ;

Shin, SM ;

Kim, SP ;

Lee, JK ;

Park, YS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A) :4052-4056

[6]

LIDE DR, 2003, HDB CHEM PHYS, V12, P108

[7]

Electric-pulse-induced reversible resistance change effect in magnetoresistive films [J].

Liu, SQ ;

Wu, NJ ;

Ignatiev, A .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2749-2751

[8]

Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature -: art. no. 224403 [J].

Odagawa, A ;

Sato, H ;

Inoue, IH ;

Akoh, H ;

Kawasaki, M ;

Tokura, Y ;

Kanno, T ;

Adachi, H .

PHYSICAL REVIEW B, 2004, 70 (22) :224403-1

[9]

Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface [J].

Sawa, A ;

Fujii, T ;

Kawasaki, M ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4073-4075

[10]

Electrode dependence of resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Kim, DC ;

Ahn, SE ;

Park, BH ;

Kim, YS ;

Yoo, IK ;

Byun, IS ;

Hwang, IR ;

Kim, SH ;

Kim, JS ;

Choi, JS ;

Lee, JH ;

Jeon, SH ;

Hong, SH ;

Park, BH .

APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3

← 1 2 →