High-sensitivity SOI MOS photodetector with self-amplification

被引:40
作者
Yamamoto, H
Taniguchi, K
Hamaguchi, C
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期
关键词
SOI; MOSFET; photodetector; photocurrent; current gain; response time;
D O I
10.1143/JJAP.35.1382
中图分类号
O59 [应用物理学];
学科分类号
摘要
A high-sensitivity silicon-on-insulator (SOI) metal-oxide-silicon (MOS) photodetector compatible with conventional silicon technology is proposed. Its operation principle is based on that of a lateral bipolar transistor in spite of an SOI MOS device structure. Photodetectors with narrow base width or short channel length have high current gain which is attributed to a self-biased effect under illumination. Current gain as high as 100 has been achieved for the device with a channel length of 1.0 mu m. Measured intrinsic response time for optical pulses is 19 mu s for the photodetector with a channel length of 0.7 mu m.
引用
收藏
页码:1382 / 1386
页数:5
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