A HIGH-GAIN, MODULATION-DOPED PHOTODETECTOR USING LOW-TEMPERATURE MBE-GROWN GAAS

被引：13

作者：

SUBRAMANIAN, S

SCHULTE, D

UNGIER, L

ZHAO, P

PLANT, TK

机构：

[1] Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon Stat University, Corvallis

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 01期

关键词：

D O I：

10.1109/55.363212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report the fabrication and performance of a novel, high gain photodetector. Basically, the device is a modulation-doped field effect transistor (MODFET) structure with its channel region made of low-temperature MBE-grown GaAs. It exhibits an excellent responsivity of 65 A/W at similar to 0.87 mu m and 6.5 A/W at similar to 1.0 mu m. In the sub-bandgap range (0.9-1.3 mu m) the responsivity of this device is the highest ever reported, to our knowledge, for any GaAs-based device. Thus, the device appears to be ideally suited for applications requiring a high photodetection sensitivity, especially in the 1.3 mu m wavelength region. Charge separation by the built-in field normal to the heterojunction plane is attributed to be responsible for the gain in the device.

引用

页码：20 / 22

页数：3

共 10 条

[1] SUBPICOSECOND CARRIER LIFETIME IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

GUPTA, S ;

FRANKEL, MY ;

VALDMANIS, JA ;

WHITAKER, JF ;

MOUROU, GA ;

SMITH, FW ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3276-3278

[2] STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

KAMINSKA, M ;

LILIENTALWEBER, Z ;

WEBER, ER ;

GEORGE, T ;

KORTRIGHT, JB ;

SMITH, FW ;

TSAUR, BY ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1881-1883

[3] DONOR AND ACCEPTOR CONCENTRATIONS IN MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 300-DEGREES-C AND 400-DEGREES-C [J].

LOOK, DC ;

ROBINSON, GD ;

SIZELOVE, JR ;

STUTZ, CE .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :3004-3006

[4] INFRARED-ABSORPTION OF DEEP DEFECTS IN MOLECULAR-BEAM-EPITAXIAL GAAS-LAYERS GROWN AT 200-DEGREES-C - OBSERVATION OF AN EL2-LIKE DEFECT [J].

MANASREH, MO ;

LOOK, DC ;

EVANS, KR ;

STUTZ, CE .

PHYSICAL REVIEW B, 1990, 41 (14) :10272-10275

[5] EFFECT OF A GAAS BUFFER LAYER GROWN AT LOW SUBSTRATE TEMPERATURES ON A HIGH-ELECTRON-MOBILITY MODULATION-DOPED TWO-DIMENSIONAL ELECTRON-GAS [J].

MELLOCH, MR ;

MILLER, DC ;

DAS, B .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :943-945

[6] NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS [J].

SMITH, FW ;

CALAWA, AR ;

CHEN, CL ;

MANFRA, MJ ;

MAHONEY, LJ .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :77-80

[7] PICOSECOND GAAS-BASED PHOTOCONDUCTIVE OPTOELECTRONIC DETECTORS [J].

SMITH, FW ;

LE, HQ ;

DIADIUK, V ;

HOLLIS, MA ;

CALAWA, AR ;

GUPTA, S ;

FRANKEL, M ;

DYKAAR, DR ;

MOUROU, GA ;

HSIANG, TY .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :890-892

[8]

UMEDA T, 1985, JPN J APPL PHYS, pL367

[9] 1.3-MU-M P-I-N PHOTODETECTOR USING GAAS WITH AS PRECIPITATES (GAAS-AS) [J].

WARREN, AC ;

BURROUGHES, JH ;

WOODALL, JM ;

MCINTURFF, DT ;

HODGSON, RT ;

MELLOCH, MR .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (10) :527-529

[10] ARSENIC PRECIPITATES AND THE SEMI-INSULATING PROPERTIES OF GAAS BUFFER LAYERS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

WARREN, AC ;

WOODALL, JM ;

FREEOUF, JL ;

GRISCHKOWSKY, D ;

MCINTURFF, DT ;

MELLOCH, MR ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1990, 57 (13) :1331-1333

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