Molecular beam epitaxy growth of 1.3 mu m high-reflectivity AlGaAsSb/AlAsSb Bragg mirror

被引：9

作者：

Almuneau, G

Genty, F

Chusseau, L

Bertru, N

Fraisse, B

Jacquet, J

机构：

[1] UNIV MONTPELLIER 2,UPRESA 5072 CNRS,LAB AGREGATS MOL & MAT INORGAN,F-34095 MONTPELLIER,FRANCE

[2] ALCATEL ALSTHOM RECH,F-91460 MARCOUSSIS,FRANCE

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 14期

关键词：

distributed Bragg reflector lasers; molecular beam epitaxial growth;

D O I：

10.1049/el:19970830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first high reflectivity (R = 97.7%) Al0.3Ga0.7As0.5Sb0.5/AlAs0.59Sb0.41 Bragg mirror lattice matched to InP was obtained at 1.28 mu m by solid source molecular beam epitaxy. This result was achieved with only 15.5 periods in the stack. A comparison between the calculated and the measured Bragg mirror reflectivities shows a near perfect agreement.

引用

页码：1227 / 1228

页数：2

共 6 条

[1] REFRACTIVE-INDEXES OF ALSB AND GASB-LATTICE-MATCHED ALXGA1-XASYSB1-Y IN THE TRANSPARENT WAVELENGTH REGION [J].