Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

被引：50

作者：

Liu, Y. ^{[1
,2
]}

Liu, S. ^{[1
,2
]}

Wang, Y. ^{[3
]}

Feng, G. ^{[3
]}

Zhu, J. ^{[1
,2
]}

Zhao, L. ^{[1
,2
]}

机构：

[1] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[2] Fudan Univ, Surface Phys Natl Key Lab, Shanghai 200433, Peoples R China

[3] Natl Inst Metrol, Spectrophotometry Lab, Beijing 100013, Peoples R China

来源：

LASER PHYSICS | 2008年 / 18卷 / 10期

关键词：

Laser pulses - Light absorption - Silicon - Femtosecond lasers;

D O I：

10.1134/S1054660X08100071

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Absorptive properties of surface-structured silicon prepared by femtosecond laser pulses irradiating in SF6 or N-2 are measured in a wide wavelength range of 0.3-16.0 mu m. The SF6-prepared surface-structured silicon shows enhanced light absorptance up to 80% or more in the entire measured wavelength range. The absorptance for N-2-prepared surface-structured silicon in the wavelength range of 9-14 mu m is similar to that of a SF6-prepared sample, although it decreases to about 30% in the wavelength range of 2-7 mu m. Light absorption varies with the height and density of the spikes formed on silicon surfaces.

引用

页码：1148 / 1152

页数：5

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