Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy

被引：18

作者：

Kawasaki, K

Nakamatsu, I

Hirayama, H

Tsutsui, K

Aoyagi, Y

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[3] Japan Sci & Technol, CREST, Kawaguchi, Saitama 33200012, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 243卷 / 01期

关键词：

nanopillar; nanostructures; selective area growth; molecular beam epitaxy; ammonia gas;

D O I：

10.1016/S0022-0248(02)01497-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective area growth of GaN nanopillars was performed via gas source molecular beam epitaxy using ammonia gas as a nitrogen source and the associated growth mechanism was discussed. The aspect ratio of the pillar structures was found to be sensitive to both growth temperature and V/III ratio. The primary reason for the change in aspect ratio is re-evaporation of nitrogen from the growth surface. In addition, the growth condition under which the pillar diameter was dependent on only the window diameter of the selective growth mask was clarified, and a maximum aspect ratio of 61 was obtained for a 9-nm pillar diameter. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：129 / 133

页数：5

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