Thermal oxidation of free-standing porous silicon films

被引：72

作者：

Salonen, J

Lehto, VP

Laine, E

机构：

[1] Department of Physics, University of Turku

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.118294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the thermal oxidation of free-standing porous silicon films from room temperature to 730 degrees C with a differential scanning calorimeter and a thermogravimeter. We have observed three different thermal oxidation processes for the porous silicon. The change of enthalpy (Delta H) and activation energy (E(a)) for the first reaction has been calculated. The oxidation of a fresh sample has been compared with those of aged samples, which were stored in dry relative humidity (RH 0%), humid (RH 100%) and normal (RH 25%-35%) laboratory air atmospheres. We also used Fourier transform infrared spectroscopy to clarify the bonds for each process. (C) 1997 American Institute of Physics.

引用

收藏

页码：637 / 639

页数：3

相关论文

共 12 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] CORRELATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF LUMINESCENT, HIGHLY OXIDIZED POROUS SILICON [J].

CULLIS, AG ;

CANHAM, LT ;

WILLIAMS, GM ;

SMITH, PW ;

DOSSER, OD .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :493-501

[4]

Iler K. R., 1979, The Chemistry of Silica. Solubility, Polymerization, Colloid and Surface Properties, and Biochemistry

[5] INITIAL OXIDATION PROCESS OF ANODIZED POROUS SILICON WITH HYDROGEN-ATOMS CHEMISORBED ON THE INNER SURFACE [J].

KATO, Y ;

ITO, T ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1406-L1409

[6] PHOTOLUMINESCENCE OF POROUS SILICON EXPOSED TO AMBIENT AIR [J].

MARUYAMA, T ;

OHTANI, S .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1346-1348

[7] INFRARED-SPECTRUM OF OXYGEN IN SILICON [J].

OATES, AS ;

STAVOLA, M .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :3114-3116

[8] ROOM-TEMPERATURE BACKBOND OXIDATION OF THE POROUS SILICON SURFACE BY OXYGEN RADICAL IRRADIATION [J].

OKEEFFE, P ;

AOYAGI, Y ;

KOMURO, S ;

KATO, T ;

MORIKAWA, T .

APPLIED PHYSICS LETTERS, 1995, 66 (07) :836-838

[9]

SALONEN J, UNPUB

[10] PHOTOLUMINESCENCE AUGER-SPECTROSCOPY OF POROUS SI - SOLVENT, REACTIVE ION ETCHING, ANNEALING, AND SUBSTRATE BORON LEVEL EFFECTS [J].

SHINAR, R ;

ROBINSON, DS ;

PARTEE, J ;

LANE, PA ;

SHINAR, J .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3403-3411