Silane-Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs

被引：20

作者：

Chin, Hock-Chun ^{[1
]}

Zhu, Ming ^{[1
]}

Liu, Xinke ^{[1
]}

Lee, Hock-Koon ^{[2
]}

Shi, Luping ^{[2
]}

Tan, Leng-Seow ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 117576, Singapore

[2] Data Storage Inst, Singapore 117608, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期

关键词：

GaAs; high-k; high mobility; MOSFET; surface passivation; GAAS MOSFET; GATE; PERFORMANCE; OXIDE; LAYER;

D O I：

10.1109/LED.2008.2010831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel surface passivation technology employing silane (SiH4) and ammonia (NH3) was demonstrated to realize high-quality metal-gate/high-k dielectric stack on GaAs. In addition to ex situ cleaning/passivation and in situ vacuum anneal to remove the native oxide on GaAs, the key improvements reported in this letter include the introduction of NH3 in a SiH4 passivation to form a SiN passivation layer that protects the GaAs surface from exposure to the oxidizing ambient during high-k dielectric deposition. Negligible As-O and Ga-O bonds were found. This passivation technology was integrated in a metal-organic chemical-vapor deposition tool. Inversion-type GaAs n-MOSFETs were fabricated with the SiH4 and NH3 passivation technology, showing good electrical characteristics with a peak effective mobility of 1920 cm(2)/V . s, an I-on/I-off ratio of similar to 10(5), and a subthreshold swing of similar to 98 mV/dec, in surface-channel GaAs MOSFETs with a gate length of 2 mu m.

引用

页码：110 / 112

页数：3

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