共 12 条
- [1] COMPENSATION IN N-TYPE GAAS RESULTING FROM NITROGEN ION-IMPLANTATION[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1059 - 1062DUNCAN, WMMATTESON, S
- [2] Heckingbottom R., 1973, RADIAT EFF, V17, P31
- [3] THE ROLE OF GALLIUM ANTISITE DEFECT IN ACTIVATION AND TYPE-CONVERSION IN SI IMPLANTED GAAS[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12): : L921 - L924HIRAMOTO, TMOCHIZUKI, YSAITO, TIKOMA, T
- [4] EFFECT OF DISLOCATIONS ON SHEET CARRIER CONCENTRATION OF SI-IMPLANTED, SEMI-INSULATING, LIQUID-ENCAPSULATED CZOCHRALSKI GROWN GAAS[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (02): : L160 - L162HYUGA, F
- [5] ELECTRICAL UNIFORMITY FOR SI-IMPLANTED LAYER OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS[J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 620 - 622HYUGA, FKOHDA, HNAKANISHI, HKOBAYASHI, THOSHIKAWA, K
- [6] ACTIVATION MECHANISM FOR SI IMPLANTED INTO SEMIINSULATING GAAS[J]. APPLIED PHYSICS LETTERS, 1986, 48 (25) : 1742 - 1744HYUGA, FWATANABE, KOSAKA, JHOSHIKAWA, K
- [7] CRYSTAL-GROWTH OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 813 - 816KOHDA, HYAMADA, KNAKANISHI, HKOBAYASHI, TOSAKA, JHOSHIKAWA, K
- [8] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344LAGOWSKI, JGATOS, HCPARSEY, JMWADA, KKAMINSKA, MWALUKIEWICZ, W
- [9] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855MIYAZAWA, SISHII, YISHIDA, SNANISHI, Y
- [10] ROLE OF BORON IN ELECTRICAL-PROPERTIES OF SEMIINSULATING GAAS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 191 - 193OSAKA, JHYUGA, FKOBAYASHI, TYAMADA, YORITO, F