ACTIVATION MECHANISM FOR SI IMPLANTED INTO SEMIINSULATING GAAS

被引：22

作者：

HYUGA, F

WATANABE, K

OSAKA, J

HOSHIKAWA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 25期

关键词：

D O I：

10.1063/1.96821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1742 / 1744

页数：3

共 8 条

[1] SPECIFIC SITE LOCATION OF S AND SI IN ION-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

LING, SC .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :880-882

[2] THE DEPENDENCE OF THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFET ON ANNEALING METHOD [J].

EGAWA, T ;

SANO, Y ;

NAKAMURA, H ;

ISHIDA, T ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (01) :L35-L38

[3] ELECTRICAL UNIFORMITY FOR SI-IMPLANTED LAYER OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS [J].

HYUGA, F ;

KOHDA, H ;

NAKANISHI, H ;

KOBAYASHI, T ;

HOSHIKAWA, K .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :620-622

[4]

HYUGA F, 1985, JPN J APPL PHYS, V22, pL160

[5] MECHANISM FOR THE THRESHOLD VOLTAGE SHIFT OF A GAAS FIELD-EFFECT TRANSISTOR AROUND DISLOCATIONS [J].

MIYAZAWA, S ;

WADA, K .

APPLIED PHYSICS LETTERS, 1986, 48 (14) :905-907

[6] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

MIYAZAWA, S ;

ISHII, Y ;

ISHIDA, S ;

NANISHI, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855

[7]

WATANABE K, 1986, I PHYS C SER, V79, P277

[8]

WINSTON HV, 1985, I PHYS C SER, V74, P497

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