Spin Tunneling heads above 20 Gb/in2

被引：24

作者：

Mao, S ^{[1
]}

Nowak, J ^{[1
]}

Song, D ^{[1
]}

Kolbo, P ^{[1
]}

Wang, L ^{[1
]}

Linville, E ^{[1
]}

Saunders, D ^{[1
]}

Murdock, E ^{[1
]}

Ryan, P ^{[1
]}

机构：

[1] Seagate Technol, Bloomington, MN 55435 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2002年 / 38卷 / 01期

关键词：

areal density; micromagnetic modeling; spin-stand test; spin tunneling heads; TGMR;

D O I：

10.1109/TMAG.2002.988915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spin tunneling recording heads above 20 Gb/in(2) have been fabricated using a bottom tunneling junction stack. The spin tunneling stack is made of Ta/PtMn/CoFe/Ru/CoFe/AlO/NiFe/Ta and stabilized by a permanent magnet abutted junction. The effective junction width is about 0.4 mum wide and lapped to the junction with an optimum stripe height. The barrier has resistance area product of 15-20 Omegamum(2), leading to a typical head resistance of around 50 Omega. Isolated pulses during the spin-stand test shows large signal up to 10 mV On track error rate floor is better than 10(-9) and the head signal-to-noise ratio is also better than that of a conventional spin valve GMR head. The areal density estimated (using 2 BER of 10(-5)) is above 20 Gb/in(2).

引用

页码：78 / 83

页数：6

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