RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100)

被引：50

作者：

Töben, L ^{[1
]}

Hannappel, T ^{[1
]}

Möller, K ^{[1
]}

Crawack, HJ ^{[1
]}

Pettenkofer, C ^{[1
]}

Willig, F ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, SE4, D-14109 Berlin, Germany

来源：

SURFACE SCIENCE | 2001年 / 494卷 / 01期

关键词：

gallium phosphide; indium phosphide; surface relaxation and reconstruction; reflection spectroscopy; growth; chemical vapor deposition; scanning tunneling microscopy; low energy electron diffraction (LEED);

D O I：

10.1016/S0039-6028(01)01492-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reflectance difference spectroscopy was measured in the metal organic chemical vapor deposition reactor and also in UHV at 20 K. It revealed a characteristic negative peak at the low energy side that was indicative of the specific surface reconstruction. This peak disappeared completely if the sample was kept within a narrow inter-mediate temperature range. At 20 K the negative peak appeared at 2.4 eV for the Ga-terminated (2 x 4)-reconstructed surface and at 2.6 eV for the P-terminated (2 x 1)/(2 x 2)-reconstructed surface. RDS for the two different surface reconstructions displayed strong structures also in the range of the bulk transitions. A characteristic zig-zag pattern was observed in the STM image of the P-terminated surface. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：L755 / L760

页数：6

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