Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100)

被引:22
作者
Hannappel, T
Visbeck, S
Zorn, M
Zettler, JT
Willig, F
机构
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
[2] Tech Univ Berlin, D-10623 Berlin, Germany
关键词
InP(100); RAS; MOCVD; UHV; surface; reconstruction;
D O I
10.1016/S0022-0248(00)00668-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Reflectance anisotropy (RA) spectra of InP(100) surfaces were taken either in the MOCVD environment or, after contamination-free transfer to ultra-high vacuum (UHV), in UHV down to 20 K. They were correlated with photoemission and Auger electron spectroscopy measurements to investigate the transition from the P-rich to the In-rich surface reconstruction. The strongest surface stoichiometry-induced changes were found in the RA-spectra at around 3 eV photon energy, i.e. in the range of the surface-modified bulk E-1 transition. At around 1.8 eV, the main peak of a pronounced surface transition was recorded with equal magnitude and sign for the P-rich and for the In-rich surface reconstruction. Two different specific RA-spectra measured with the highest peaks are postulated here to indicate the ordered P-rich and ordered In-rich surface reconstruction, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:124 / 128
页数:5
相关论文
共 13 条
[1]   Molecular control over semiconductor surface electronic properties: Dicarboxylic acids on CdTe, CdSe, GaAs, and InP [J].
Cohen, R ;
Kronik, L ;
Shanzer, A ;
Cahen, D ;
Liu, A ;
Rosenwaks, Y ;
Lorenz, JK ;
Ellis, AB .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1999, 121 (45) :10545-10553
[2]   Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV [J].
Hannappel, T ;
Visbeck, S ;
Knorr, K ;
Mahrt, J ;
Zorn, M ;
Willig, F .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (04) :427-431
[3]  
HANNAPPEL T, 1999, Patent No. 19837851
[4]   A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy [J].
Li, L ;
Han, BK ;
Law, D ;
Li, CH ;
Fu, Q ;
Hicks, RF .
APPLIED PHYSICS LETTERS, 1999, 75 (05) :683-685
[5]   Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction [J].
Li, L ;
Han, BK ;
Fu, Q ;
Hicks, RF .
PHYSICAL REVIEW LETTERS, 1999, 82 (09) :1879-1882
[6]   Photon-induced localization in optically absorbing materials [J].
Mantese, L ;
Bell, KA ;
Aspnes, DE ;
Rossow, U .
PHYSICS LETTERS A, 1999, 253 (1-2) :93-97
[7]   Structural fingerprints in the reflectance anisotropy spectra of InP(001)(2x4) surfaces [J].
Schmidt, WG ;
Briggs, EL ;
Bernholc, J ;
Bechstedt, F .
PHYSICAL REVIEW B, 1999, 59 (03) :2234-2239
[8]   Over 30% efficient InGaP/GaAs tandem solar cells [J].
Takamoto, T ;
Ikeda, E ;
Kurita, H ;
Ohmori, M .
APPLIED PHYSICS LETTERS, 1997, 70 (03) :381-383
[9]   Surface termination effect on reflectance spectra of GaAs [J].
Uwai, K ;
Kobayashi, N .
PHYSICAL REVIEW LETTERS, 1997, 78 (05) :959-962
[10]   Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE [J].
Vogt, P ;
Hannappel, T ;
Visbeck, S ;
Knorr, K ;
Esser, N ;
Richter, W .
PHYSICAL REVIEW B, 1999, 60 (08) :R5117-R5120