Structural fingerprints in the reflectance anisotropy spectra of InP(001)(2x4) surfaces

被引:47
作者
Schmidt, WG [1 ]
Briggs, EL
Bernholc, J
Bechstedt, F
机构
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[2] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 03期
关键词
D O I
10.1103/PhysRevB.59.2234
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reflectance anisotropy has been calculated from first principles for a series of recently proposed structural models of the InP(001)(2x4) surface. The features of the calculated spectra are related to specific surface bonding configurations. We find a pronounced negative anisotropy around 1.7 eV linked to transitions between sigma-like In-In bonding states and empty dangling bonds localized at the surface cations. The strength of that anisotropy is directly related to the number of In-In bonds at the surface. This explains the gradual change of the corresponding measured anisotropy in that energy region, depending on the growth conditions. Positive anisotropies at higher energies arise from transitions between P-P dimer related states and surface resonances. Additionally we find derivativelike features at the energy of the E-1 peak that depend only weakly on the surface structure and stoichiometry. In conjunction with the experimental data, our results indicate that the (2X4) reconstructed InP(001) surface features In-In bonds along [110] and P-P dimers parallel to [1 (1) over bar 0], respectively. The relative number of these bonds varies with the growth conditions. [S0163-1829(99)09003-7].
引用
收藏
页码:2234 / 2239
页数:6
相关论文
共 58 条
[1]   Ab initio calculation of excitonic effects in the optical spectra of semiconductors [J].
Albrecht, S ;
Reining, L ;
Del Sole, R ;
Onida, G .
PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4510-4513
[2]  
[Anonymous], 1995, EPIOPTICS LINEAR NON
[3]   ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW LETTERS, 1985, 54 (17) :1956-1959
[4]   DIRECT OPTICAL MEASUREMENT OF SURFACE DIELECTRIC RESPONSES - INTERRUPTED GROWTH ON (001) GAAS [J].
ASPNES, DE ;
CHANG, YC ;
STUDNA, AA ;
FLOREZ, LT ;
FARRELL, HH ;
HARBISON, JP .
PHYSICAL REVIEW LETTERS, 1990, 64 (02) :192-195
[5]   GIANT QUASI-PARTICLE SHIFTS OF SEMICONDUCTOR SURFACE-STATES [J].
BECHSTEDT, F ;
DELSOLE, R .
SOLID STATE COMMUNICATIONS, 1990, 74 (01) :41-44
[6]  
Bechstedt F., 1992, Advances in Solid State Physics, V32, P161
[7]   Optical absorption of insulators and the electron-hole interaction: An ab initio calculation [J].
Benedict, LX ;
Shirley, EL ;
Bohn, RB .
PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4514-4517
[8]   OPTICAL-TRANSITIONS ON GAAS [110] SURFACE [J].
BERKOVITS, VL ;
MAKARENKO, IV ;
MINASHVILI, TA ;
SAFAROV, VI .
SOLID STATE COMMUNICATIONS, 1985, 56 (05) :449-450
[9]   LARGE-SCALE ELECTRONIC-STRUCTURE CALCULATIONS WITH MULTIGRID ACCELERATION [J].
BRIGGS, EL ;
SULLIVAN, DJ ;
BERNHOLC, J .
PHYSICAL REVIEW B, 1995, 52 (08) :R5471-R5474
[10]   Real-space multigrid-based approach to large-scale electronic structure calculations [J].
Briggs, EL ;
Sullivan, DJ ;
Bernholc, J .
PHYSICAL REVIEW B, 1996, 54 (20) :14362-14375