Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

被引:94
作者
Fissel, A [1 ]
Dabrowski, J [1 ]
Osten, HJ [1 ]
机构
[1] IHP, D-15236 Frankfurt, Germany
关键词
D O I
10.1063/1.1471943
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray photoelectron spectroscopy (XPS) was performed to study the formation process of Pr2O3/Si(001) interfaces and films during epitaxial growth and postgrowth annealing. A significant shift in the Pr and O core-level binding energy was found accompanied by an analogous shift in the Pr2O3 valence band maximum. This shift depends on the oxide layer thickness and interface structure, as indicated by ab initio pseudopotential calculations. It is caused by interface dipoles in the Si/Pr2O3 interface region due to the accumulation of oxygen. Besides providing a insight into the growth mechanism and interface properties of high-K dielectrics on Si, our results also demonstrate the usefulness of in vacuo XPS for investigating epitaxial growth processes. (C) 2002 American Institute of Physics.
引用
收藏
页码:8986 / 8991
页数:6
相关论文
共 39 条
[31]   Nitrogen incorporation at Si(001)-SiO2 interfaces:: Relation between N 1s core-level shifts and microscopic structure [J].
Rignanese, GM ;
Pasquarello, A ;
Charlier, JC ;
Gonze, X ;
Car, R .
PHYSICAL REVIEW LETTERS, 1997, 79 (25) :5174-5177
[32]  
SAMSONOV GV, 1982, OXIDE HDB
[33]   XPES STUDIES OF OXIDES OF 2ND-ROW AND 3RD-ROW TRANSITION-METALS INCLUDING RARE-EARTHS [J].
SARMA, DD ;
RAO, CNR .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 20 (1-2) :25-45
[34]   Kinetic and structural studies of oxygen availability of the mixed oxides Pr(1-x)M(x)O(y) (M=Ce, Zr) [J].
Sinev, MY ;
Graham, GW ;
Haack, LP ;
Shelef, M .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (08) :1960-1971
[35]   ELECTRON-SPIN RESONANCE OBSERVATION OF THE INTERFACIAL STAR SI=SI3, (PB0) DEFECT IN THERMALLY GROWN (111)SI/SI3N4 [J].
STESMANS, A ;
VANGORP, G .
APPLIED SURFACE SCIENCE, 1989, 39 (1-4) :317-326
[36]   AUGER AND PHOTOELECTRON LINE ENERGY RELATIONSHIPS IN ALUMINUM-OXYGEN AND SILICON-OXYGEN COMPOUNDS [J].
WAGNER, CD ;
PASSOJA, DE ;
HILLERY, HF ;
KINISKY, TG ;
SIX, HA ;
JANSEN, WT ;
TAYLOR, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04) :933-944
[37]   Influence of atmosphere on phase transitions of praseodymium oxide at high temperature using high temperature x-ray diffraction and thermogravimetry [J].
Wakiya, N ;
Chun, SY ;
Saiki, A ;
Sakurai, O ;
Shinozaki, K ;
Mizutani, N .
THERMOCHIMICA ACTA, 1998, 313 (01) :55-61
[38]  
WATANABE H, 1978, APPL PHYS LETT, V78, P2702
[39]   Structural investigations of praseodymium oxide epitaxially grown on silicon [J].
Zaumseil, P ;
Bugiel, E ;
Liu, JP ;
Osten, HJ .
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 :789-794