ELECTRON-SPIN RESONANCE OBSERVATION OF THE INTERFACIAL STAR SI=SI3, (PB0) DEFECT IN THERMALLY GROWN (111)SI/SI3N4

被引:8
作者
STESMANS, A
VANGORP, G
机构
关键词
D O I
10.1016/0169-4332(89)90446-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:317 / 326
页数:10
相关论文
共 33 条
[1]   ELECTRON-PARAMAGNETIC-RES OF DEFECTS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION .1. O+ IMPLANTATION [J].
BARKLIE, RC ;
HOBBS, A ;
HEMMENT, PLF ;
REESON, K .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (32) :6417-6432
[2]   KINETICS OF H-2 PASSIVATION OF PB CENTERS AT THE (111) SI-SIO2 INTERFACE [J].
BROWER, KL .
PHYSICAL REVIEW B, 1988, 38 (14) :9657-9666
[3]   STRUCTURAL FEATURES AT THE SI-SIO2 INTERFACE [J].
BROWER, KL .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 :177-189
[4]   STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE [J].
BROWER, KL .
PHYSICAL REVIEW B, 1986, 33 (07) :4471-4478
[5]   DIPOLAR INTERACTIONS BETWEEN DANGLING BONDS AT THE (111) SI-SIO2 INTERFACE [J].
BROWER, KL ;
HEADLEY, TJ .
PHYSICAL REVIEW B, 1986, 34 (06) :3610-3619
[6]   SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].
BROWER, KL .
APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113
[7]   ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].
CAPLAN, PJ ;
POINDEXTER, EH ;
DEAL, BE ;
RAZOUK, RR .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854
[8]   PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES IN SILICON-ON-INSULATOR FILMS [J].
CARLOS, WE .
APPLIED PHYSICS LETTERS, 1987, 50 (20) :1450-1452
[9]   AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J].
CHANG, ST ;
WU, JK ;
LYON, SA .
APPLIED PHYSICS LETTERS, 1986, 48 (10) :662-664
[10]   HYPERFINE INTERACTIONS OF THE PB CENTER AT THE SIO2 SI(111) INTERFACE [J].
COOK, M ;
WHITE, CT .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1741-1744