共 33 条
[1]
ELECTRON-PARAMAGNETIC-RES OF DEFECTS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION .1. O+ IMPLANTATION
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1986, 19 (32)
:6417-6432
[2]
KINETICS OF H-2 PASSIVATION OF PB CENTERS AT THE (111) SI-SIO2 INTERFACE
[J].
PHYSICAL REVIEW B,
1988, 38 (14)
:9657-9666
[3]
STRUCTURAL FEATURES AT THE SI-SIO2 INTERFACE
[J].
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE,
1987, 151
:177-189
[4]
STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE
[J].
PHYSICAL REVIEW B,
1986, 33 (07)
:4471-4478
[5]
DIPOLAR INTERACTIONS BETWEEN DANGLING BONDS AT THE (111) SI-SIO2 INTERFACE
[J].
PHYSICAL REVIEW B,
1986, 34 (06)
:3610-3619
[9]
AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE
[J].
APPLIED PHYSICS LETTERS,
1986, 48 (10)
:662-664